High mobility electron-conducting thin-film transistors by organic vapor phase deposition

摘要

In this letter, we report on the growth of thin films of N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) by organic vapor phase deposition (OVPD). Uniform films are deposited with a material utilization efficiency of 59 +/- 4% and deposition rates up to 15 angstrom/s. Top-contact transistors based on OVPD-grown PTCDI-C13H27 show high n-type mobilities (up to 0.3 cm(2)/V s) and reproducible characteristics. The influence of deposition parameters on electrical properties is discussed. (C) 2008 American Institute of Physics.